central semiconductor corp. tm 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com process CP595 small signal transistor pnp - high voltage transistor chip princip al device types 2n5680 geometry process details backside collector r2 (1-august 2002) process epitaxial planar die size 30 x 30 mils die thickness 7.0 mils base bonding pad area 8.0 x 8.0 mils emitter bonding pad area 7.6 x 7.6 mils top side metalization al - 30,000 ? back side metalization au - 10,000? gross die per 4 inch w afer 12,550
central semiconductor corp. tm process CP595 typical electrical characteristics 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r2 (1-august 2002)
|
